This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.
A useful general purpose Mosfet transistor in a surface mount SOT23 package. Suitable for 3.3V and 5V systems.
MOSFET N-CH 30V
Transistor Polarity N Channel
Continuous Drain Current Id: 180mA
Drain Source Voltage Vds: 60V
On Resistance Rds(on): 5 ohm
Rds(on) Test Voltage Vgs: 10V
Threshold Voltage Vgs Typ: 2.1V
Power Dissipation Pd: 360mW
Operating Temperature Range: -55°C to +150°C
Transistor Case Style: N-CH 30V
No. of Pins: 3
Minimize conduction loss
Reduces dynamic power losses
Drive at low voltage
ESD resistance
Environmental consideration
I designed input devices board to accommodate also as an output device. Please refer to input devices week to show the design board.
I've used array of LEDs as an output device, here in the output device board you can observe four LEDs connected to the different port pins of the micro-controller when the micro-controller detects the signal coming from the MOSFET it sends the output signal on the particular LED pin.
For the demonstration of the output devices I've used a code which generates the blinking pattern of the LEDs. Which you can see in the video attached below.
Here's how I've connected the LEDs to the micro-controller.